ГОСТ Р 56662—2015
phase-contrast photolithography
7.1.21
photochemical etching
7.3.16
photolithography
7.1.20
photothermal syntheses
6.2.3
physical etching
7.3.17
physical vapour deposition
7.2.14
plasma etching
7.3.18
plasma spray
6.2.1.2
plasmomc lithography
7.1.22
polyelectrolyte layer-by-layer
7.2.15
polymer nanoparticle dispersion
6.5.12
prompt Inorganic condensation
6.4.3
PVD
7.2.14
pyrogenesis
6.2.1.3
radiation track etching
7.3.19
reactive ion etching
7.3.20
reverse micelle process
6.4.4
RIE
7.3.20
SAM formation
5.8
scanning force probe writing
7.1.23
scanning tunneling microscope chemical vapour deposition
7.1.24
selective etching
7.3.21
self-assembled monolayer formation
5.8
self-assembty
3.11
shape-based assembly
4.5
soft lithography
7.1.25
sol-gel processing
6.4.5
solution precursor plasma spray
6.2.1.4
spark plasma sintering
6.5.13.3
spin coating
7.2.17
spray deposition
7.2.18
spray drying
6.1.4.2
sputter deposition
7.2.19
sputter etching
7.3.17
STM CVD
7.1 24
Stober process
6.4.7
Stranski-Krastanow growth
5.9
subtractive processing
7.1.27
supercritical expansion
6.1.5
supramolecular assembly
4.6
surface functionalization
3.12
surface polymerization
7.2.20
surface-to-surface transfer
4.7
surfactant templatmg
6.4.6
suspension combustion thermal spray
6.1.6
tape casting
6.3.5
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