ГОСТ Р 56662—2015
dip-pen nanolithography
7.1.6
directed assembly
3.4
directed self-assembly
3.5
DRIE
7.3.7
dry-ashing
7.3.8
dry ball milling
6.59.2
dry-etching
7.3.9
DUV
7.1.5
electron-beam evaporation
6.1.2
electron-beam lithography
7.1.7
electrochemical anodization
6.6.2
electrodeposition
7.2.7
electroless deposition
7.2.8
electroplating
7.2.7
electro-spark deposition
6.1.3.1
electrospinning
6.3.1
electro-spray
7.2.9
electrostatic driven assembly
4.1
embossing
7.4.1
EUV
7.1.8
evaporation
7.2.10
extreme ultraviolet lithography
7.1.8
FIB
7.1.9
FIB
7.2.12
FIB
7.3.10
fluidic alignment
4.2
focused electron-beam deposition
7.2.11
focused ion-beam deposition
7.2.12
focused ion-beam etching
7.3.10
focused ion-beam lithography
7.1.9
freeze drying
6.1.4.1
graphioepitaxy
5.2
grinding
6.5.6
hierarchical assembly
4.3
high-density plasma etching
7.3.11
high-speed micromachining
6.5.7
hot pressing
6.5.13.1
hot wall tubular reaction
6.2.2
ICP
7.3.12
immersion optics
7.1.10
imprinting
7.4.1
inductive coupled plasma
7.3.12
in-sltu mtercalative polymerization
6.3.2
intercalation
6.6.3
interference lithography
7.1.11
•on beam etching
7.3.13
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